I
The downentat i on end process
conversion measures necessary to
c~ly with this revision sha~~
be ccmpleted by 31 Dec&r, 1W6
PERFORMANCE SPECI F I CAT 10N
SEM1 CDNDUCTOR DEVICES ,
GENERAL SPECIFICATION FOR
This specification is approved for use by at ( Depart-
ments nrd Agencies of the Department of Defense.
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1. SCOPE
[INCH-PUJNCI]
MI L- PRF-19500K
Nch 1W6
SUPERSEDING
MI L- S-19500J
15 Apri( 1W4
1.1 ~. This s~cif icntion establishes the genera~ per for!rnnce requirarrents for sernicorductor
devices. Detail requirenmnts ard characteristics are specified in the associated specification. Four
quality IeveLs for encapsulated devices are provided for in this spscif i cation, different iated by the
Prefi XES JAN, JANTX, JANTXV, and JANS.
Sewn radiet ion hardness ass.ra”ce (R HA) Ieve(s are provided for the
JANTXV and JAMS quak i ty Ieve[s. These are designated by the letters H, D, L, R, F, G, and H fol[ouing the
qua[ity level portion of the prefix.
Two quality leve[s for .nencapsu leted devices are provided for in this
specification, differentiated by the prefixes JANHC ard JANKC.
1.2 This Swcif i cation contains the performance requirement ncd verification methods for
semiconductor devices. The main body specifies the performance requirements and requires che manufacturer
to verify that their devices are capabie of meering those performance requirurents. Appen3ix A contains
definitions of terms used throughout the specification.
Awendix B contains ai+reviatio”s and S@e LS.
Appendix C ~onta ins the stat iscica( srnn$d ing and I ife test procedures, Alwrd I x D conca ins the q“a( i ty
SYSt~ ~wJ1r~nts. Akw~ix E contains the standerd verification fiou for encapsulated devices. Alpmdix
F Co”tal”s the Certification requirements for R.sdiatio” Hardness Assured Semiconductor devices. Apperdix G
contains the Stardwd verification fiow for unencapwlate.i devices.
Appendix H contains criticnt interface
and materials for semiconductor devices.
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1.3 The part nw!bering schemes are as fol lows:
a. The Part or Identifying Nwber (PIN) for e“cap$u [ated semicotiuctor devices furnished under this
specification is formulated .9s follow:
!LAY!w A
JAM brard ard RHA designate.r
qua(ity leve~
(see 1.3.3)
(see 1.3.1)
XY
L
Carpme.t
des i gnat i o“
(see 1.3.6)
Y.Y.u
-!-
Identification
nti r
(see 1.3.5)
L
1
suffix
letters
(see 1.3.6)
Beneficial ccarnents (recannendati.ans, additions, deletions) .rd my pertinent data which may be of use i“
improving this docwrent shou(d be addressed to: Defense Electronics Suppiy Center, AT TN: DESC-ELD,
1507 Uilmingt.m Pike, Dayton, OH 45 L41. -5765, by using the Standardizaticm Docunenc lqmovement Propesal
fOD For. 1426) ~. at the ecdof ~t or k (etter.
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AHSC N/A
~. WQrO.ed for public releese; distribution is unlimited.
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